
Rev. 1.0, 07/03, page 21 of 38
Vdd
VddQ
Vss
VssQ
3.3V
GND
A15
SH7709S/SH7729R/SH7706 512-Mbit SDRAM(×16)
A14
A13
:
:
:
:
:
:
:
:
A1
CKIO
CKE
( )
RD/
DQMLU
DQMLL
D15
D0
BA1
BA0
A12
:
:
:
:
:
:
:
:
A0
CLK
CKE
UDQM
LDQM
DQ15
DQ0
Figure 2.7 Interface between SDRAM (HM5257165B-A6) and SH7709S/SH7729R/SH7706
2.2 SH7727 SDRAM Interface Examples
2.2.1 SDRAM Direct Connection
Synchronous DRAM can be selected via the CS signal, and can be connected to areas 2 and 3 of
the physical address space in the SH7727 by using common control signals such as RAS. When
the memory type bits (DRAMTP2 to DRAMTP0) of BCR1 are set to 010, area 2 and area 3 can be
used as the normal memory area and synchronous DRAM area, respectively. When the memory
type bits (DRAMTP2 to DRAMTP0) of BCR1 are set to 011, both areas 2 and 3 can be used as
the synchronous DRAM area.
This LSI supports burst read/single write mode with burst length 1 as a synchronous DRAM
operating mode. The data bus width can be selected as either 16 bits or 32 bits. In cache-fill/write-
back cycles, 16-byte burst transfer is always performed. In write-through area write cycles or non-
cacheable area read/write cycles, only one access is performed.
To connect this LSI to synchronous DRAM directly, the RAS3, CAS, RD/WR, CS2 or CS3,
DQMUU, DQMUL, DQMLU, DQMLL, and CKE signals are used as control signals. These
interface control signals, except for CS2 and CS3, are common to each area. In addition, the
interface control signals other than CKE are valid and latched only when CS2 or CS3 is asserted.
Accordingly, synchronous DRAM can be connected in parallel to multiple areas. The CKE signal
is negated (brought low) only when self-refreshing is performed and the CKE signal is normally
asserted (brought high).
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