
29
R01DS0148EJ0102
Data Sheet
Chapter 5 I/O specification
5.1.3 PgE1
Table 5-6 PgE1 characteristics
Parameter Symbol Condition
Ratings
Unit
Min Typ Max
High level input voltage VIH
---
V
Schmitt1 0.7·E1VDD E1VDD+0.3
---
Schmitt4 (E1VDD=VPOC~3.0) 0.84·E1VDD E1VDD+0.3
Schmitt4 (E1VDD=3.0~5.5) 0.8·E1VDD E1VDD+0.3
Low level input voltage VIL
---
V
Schmitt1 -0.3 0.3·E1VDD
---
Schmitt4 (E1VDD=VPOC~3.4) -0.3 0.4·E1VDD
Schmitt4 (E1VDD=3.4~5.5) -0.3 0.5·E1VDD
High level output voltage VOH
IOH
a
= -3mA
a)
Refer to 2.3 “Port current”.
E1VDD-1.0
V
IOH = -100µA E1VDD-0.5
Low level output voltage VOL
IOL
a
= 3mA 0.4
V
IOL = 100µA 0.4
Input hysteresis of Schmit VH
Schmitt1 0.3
V---
Schmitt4 0.1
Internal pull-up resistor RU 15 40 150 k
Internal pull-down resistor RD 15 40 150 k
High level port output
current
IOH Power supply of PgE0 + PgE1 -120
b
b)
Do not exceed 30mA per each side of microcontroller.
mA
Low level port output
current
IOL Power supply of PgE0 + PgE1 120
b
mA
High level input leakage
current
ILIH VI = E1VDD 0.5 µA
Low level input leakage
current
ILIL VI = 0V -0.5 µA
High level output leakage
current
ILOH VO = E1VDD 0.5 µA
Low level output leakage
current
ILOL VO = 0V -0.5 µA
Output frequency FO 20 MHz
Rise time (output) tKRP 15 ns
Fall time (output) tKFP 15 ns
Kommentare zu diesen Handbüchern