
67
R01DS0139ED0100
Data Sheet
Chapter 8 Memory specification
Chapter 8 Memory specification
8.1 Code flash specification
Table 8-1 Code flash
8.2 Data flash specification
Table 8-2 Data flash
8.3 Serial write operation specification
Serial write operation
Parameter Symbol Condition
Ratings
Unit
Min Typ Max
Number of Re-Writes
a
a)
Please contact RENESAS sales office regarding specification other than the above.
CWRT Data retention 20 years - - 100 times
Programming
Temperature
tPRG
(A) grade products -40 - 85 °C
(A1) grade products -40 - 110 °C
(A2) grade products -40 - 125 °C
Parameter Symbol Condition
Ratings
Unit
Min Typ Max
Number of Re-Writes
a
a)
Please contact RENESAS sales office regarding specification other than the above.
DWRT1 Data retention 20 years - - 1000 times
DWRT2 Data retention 15 years - - 5000 times
DWRT3 Data retention 5 years - - 15000 times
Programming
Temperature
tPRG
(A) grade products -40 - 85 °C
(A1) grade products -40 - 110 °C
(A2) grade products -40 - 125 °C
Parameter Symbol Condition
Ratings
Unit
Min Typ Max
FLMD0 setup time tDR 1 - - ms
RESET release tPR 2 - - ms
FLMD0 pulse input start tRP - 100 - ms
FLMD0 low/high level width tPW 10 - 100 µs
FLMD0 raise time tR - - 20 ns
FLMD0 fall time tF - - 20 ns
Programming time per 128 bit - - 50 µs
Erase time per 4KB - - 54 ms
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