Renesas R8C/15 Technical Information Seite 31

  • Herunterladen
  • Zu meinen Handbüchern hinzufügen
  • Drucken
  • Seite
    / 42
  • Inhaltsverzeichnis
  • LESEZEICHEN
  • Bewertet. / 5. Basierend auf Kundenbewertungen
Seitenansicht 30
Rev.2.00 Jan 30, 2006 Page 29 of 37
REJ03B0102-0200
R8C/14 Group, R8C/15 Group 5. Electrical Characteristics
NOTES:
1. V
CC = AVCC = 4.2 to 5.5V at Topr = -20 to 85 °C / -40 to 85 °C, f(XIN)=20MHz, unless otherwise specified.
Table 5.13 Electrical Characteristics (1) [VCC = 5V]
Symbol Parameter Condition
Standard
Unit
Min. Typ. Max.
V
OH Output “H” Voltage Except XOUT IOH = -5mA VCC 2.0 VCC V
I
OH = -200µAVCC 0.3 VCC V
X
OUT Drive capacity
HIGH
IOH = -1mA VCC 2.0 VCC V
Drive capacity
LOW
I
OH = -500µAVCC 2.0 VCC V
V
OL Output “L” Voltage Except P1_0 to P1_3,
X
OUT
IOL = 5mA −−2.0 V
I
OL = 200µA −−0.45 V
P1_0 to P1_3 Drive capacity
HIGH
I
OL = 15mA −−2.0 V
Drive capacity
LOW
I
OL = 5mA −−2.0 V
Drive capacity
LOW
I
OL = 200µA −−0.45 V
X
OUT Drive capacity
HIGH
IOL = 1mA −−2.0 V
Drive capacity
LOW
I
OL = 500µA −−2.0 V
V
T+-VT- Hysteresis
INT0
, INT1, INT3,
KI0
, KI1, KI2, KI3,
CNTR0, CNTR1,
TCIN, RXD0, SSO
0.2
1.0 V
RESET
0.2 2.2 V
I
IH Input “H” current VI = 5V −−5.0 µA
I
IL Input “L” current VI = 0V −−-5.0 µA
R
PULLUP Pull-Up Resistance VI = 0V 30 50 167 k
RfXIN Feedback
Resistance
XIN 1.0 M
fRING-S Low-Speed On-Chip Oscillator Frequency 40 125 250 kHz
V
RAM RAM Hold Voltage During stop mode 2.0 −−V
Seitenansicht 30
1 2 ... 26 27 28 29 30 31 32 33 34 35 36 ... 41 42

Kommentare zu diesen Handbüchern

Keine Kommentare